Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves multiple high-growth segments of large global markets, including consumer electronics, smart home/IoT, automotive, EVs, battery-powered appliances, network infrastructure, healthcare and aerospace/defense. Visit to learn how our innovative team is helping connect, protect and power our planet.
Qorvo is seeking a Senior EDA Applications Engineer with hands-on GaN and/or GaAs RF Power Amplifier (PA) design experience to define, deploy, and support next generation 5G NR and 6G PA and RF Front-End Module (FEM) development. This is a hybrid role: part senior PA designer, part EDA methodology owner. You will bring practical, hands-on PA design expertise to the EDA flows (ADS, HFSS, Cadence, Synopsys, and related tools) that RF, analog, mixed-signal, and digital design teams depend on - ensuring those flows are grounded in real design and correlation challenges, from initial architecture definition through high-volume manufacturing.
Responsibilities:Hands-On PA/RF Design - Directly support the design of high-efficiency, high-linearity GaN and/or GaAs PAs and RF FEMs for 5G NR/6G, applying hands-on expertise to validate and continuously improve EDA methodology.
- Lead or support the integration of PA dies into multi-chip modules (MCM), optimizing methodology and flows for size, cost, and thermal performance.
EDA Applications Engineering & Methodology - Provide day-to-day applications support for PA, RFIC, analog, mixed-signal, and digital design teams using industry-standard EDA tools (Cadence Virtuoso/Spectre, Keysight ADS, Ansys HFSS, Synopsys HSPICE/PrimeSim/VCS, Xcelium, AWR, or equivalent).
- Develop, qualify, and deploy RF/PA design flows spanning circuit-level simulation (ADS) and 3D electromagnetic simulation (HFSS), ensuring consistency between models and measured silicon performance for GaN/GaAs technologies.
- Evaluate, benchmark, and deploy new EDA capabilities for custom RF/analog design, AMS simulation, and digital verification, prioritized against real PA design and correlation challenges.
- Partner with EDA vendors to resolve technical issues, influence tool roadmaps, and pilot new capabilities relevant to GaN/GaAs RF design.
- Build reference design flows, PDK enablement, reusable automation, and documented best practices spanning RF, analog, AMS, and digital methodologies.
- Deliver hands-on training, documentation, and mentoring to raise designer proficiency; document and present methodology and design results to internal and external stakeholders.
Required Qualifications: - Bachelors Degree in Electrical Engineering with 5+ years of industry experience in hands-on GaN and/or GaAs RF Power Amplifier design, or an advanced degree with equivalent experience.
- Proven track record designing PAs/FEMs using GaN and/or GaAs (HBT, HEMT, or related) technologies for cellular, 5G NR, 6G, or other high-frequency applications.
- Strong understanding of RF fundamentals, including S-parameters, impedance matching, stability, and linearity.
- Extensive hands-on experience with ADS, HFSS, and Cadence for RF circuit and EM design.
- Solid background in RF measurement and characterization, with the ability to correlate simulated models to measured silicon performance.
- Demonstrated ability to translate hands-on design experience into scalable methodology, flows, and best practices for a broader design organization.
- Excellent technical communication and presentation skills; ability to work independently in a fast-paced environment.
Preferred Qualifications - Experience defining or deploying enterprise-wide EDA design flows and methodology across multiple design teams.
- Knowledge of EM, package, thermal, and multi-physics simulation for RF front-end modules.
- Direct experience collaborating with EDA vendors on tool qualification and roadmap development.
- Experience carrying a PA or FEM design through the transition to high-volume manufacturing.
- Working knowledge of Synopsys HSPICE/PrimeSim/VCS or Xcelium.
Location: TX, FL, MA, or CO
This position requires access to ITAR/EAR technologies. Applicant must be a US Person (, permanent resident, asylee, or refugee) or eligible to obtain necessary export authorizations.
Competitive base salary commensurate with experience: $100,700 - $131,000 (subject to change dependent on physical location)
Posted salary ranges are made in good faith. Qorvo reserves the right to adjust ranges depending on the experience/qualification of the selected candidate as well as external competitiveness and internal comparability.
Base compensation is one element of Total Rewards offered at Qorvo. More information on the Total Rewards package can be shared upon request.
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MAKE A DIFFERENCE AT QORVO
We are Qorvo. We do more than create innovative RF and Power solutions for the mobile, defense and infrastructure markets - we are a place to innovate and shape the future of wireless communications. It starts with our employees. As a unified global team, we bring a commitment to excellence, growth and a passion for creating what's next. Explore the possibilities with us.
We are an Equal Employment Opportunity (EEO) employer and welcome all qualified applicants. Applicants will receive fair and impartial consideration without regard to any characteristics protected by applicable law, including race, color, religion, sex (as defined by law), national origin, age, military or veteran status, genetic information, or disability.
Qorvo is an E-Verify Employer. For more information, please see the Right to Work and E-Verify Participation posters.
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