Lehi, Utah
•
Today
Job Description Change the world. Love your job. SiGe strained channel and silicided contact integration at 28nm demands wet etch and clean chemistries that operate at nanometer precision: removing exactly the right material, at exactly the right selectivity, without disturbing adjacent films or device structures. At LFAB, these processes don't yet exist in production form. You will build them. As a Wet Process Development Engineer in TI's ATD organization in Lehi, you will own the development
Full-time







